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advance information this document contains information on a product under development at advanced micro devices. the information is intended to help you evaluate this product. amd reserves the right to change or discontinue work on this proposed product without notice. publication# 22366 rev: a amendment/ +6 issue date: september 28, 1999 refer to amds website (www.amd.com) for the latest information. am29lv640du/am29lv641du 64 megabit (4 m x 16-bit) cmos 3.0 volt-only uniform sector flash memory with versatilei/o? control distinctive characteristics n single power supply operation 2.7 to 3.6 volt read, erase, and program operations n versatilei/o (v io ) control output voltages generated and input voltages tolerated on the device is determined by the voltage on the v io pin n high performance access times as fast as 90 ns n manufactured on 0.23 m process technology n cfi (common flash interface) compliant provides device-specific information to the system, allowing host software to easily reconfigure for different flash devices n secsi (secured silicon) sector region 128-word sector for permanent, secure identification through an 8-word random electronic serial number may be programmed and locked at the factory or by the customer accessible through a command sequence n ultra low power consumption (typical values at 3.0 v, 5 mhz) 9 ma typical active read current 26 ma typical erase/program current 200 na typical standby mode current n flexible sector architecture one hundred twenty-eight 32 kword sectors n sector protection a hardware method to lock a sector to prevent program or erase operations within that sector sectors can be locked in-system or via programming equipment temporary sector unprotect feature allows code changes in previously locked sectors n embedded algorithms embedded erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors embedded program algorithm automatically writes and verifies data at specified addresses n compatibility with jedec standards pinout and software compatible with single-power supply flash superior inadvertent write protection n minimum 1 million erase cycle guarantee per sector n package options 48-pin tsop 56-pin ssop 63-ball fbga n erase suspend/erase resume suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation n data# polling and toggle bits provides a software method of detecting program or erase operation completion n unlock bypass program command reduces overall programming time when issuing multiple program command sequences n ready/busy# pin (ry/by#) (fbga package only) provides a hardware method of detecting program or erase cycle completion n hardware reset pin (reset#) hardware method to reset the device for reading array data n wp# pin (tsop packages only) at v il , protects the first or last 32 kword sector, regardless of sector protect/unprotect status at v ih , allows removal of sector protection an internal pull up to v cc is provided n acc pin accelerates programming time for higher throughput during system production n program and erase performance (v hh not applied to the acc input pin) word program time: 11 s typical sector erase time: 0.7 s typical for each 32 kword sector
2 am29lv640du/am29lv641du advance information general description the am29lv640du/am29lv641du is a 64 mbit, 3.0 volt (2.7 v to 3.6 v) single power supply flash memory devices organized as 4,194,304 words. data appears on dq0-dq15. the device is designed to be pro- grammed in-system with the standard system 3.0 volt v cc supply. a 12.0 volt v pp is not required for program or erase operations. the device can also be pro- grammed in standard eprom programmers. the device offers access times of 90 120, and 150 ns. the device is offered in 48-pin tsop, 56-pin ssop, and 63-ball fbga packages. to eliminate bus conten- tion each device has separate chip enable (ce#), write enable (we#) and output enable (oe#) controls. each device requires only a single 3.0 volt power supply (2.7 v to 3.6 v) for both read and write func- tions. internally generated and regulated voltages are provided for the program and erase operations. the device is entirely command set compatible with the jedec single-power-supply flash standard . commands are written to the command register using standard microprocessor write timing. register con- tents serve as inputs to an internal state-machine that controls the erase and programming circuitry. write cycles also internally latch addresses and data needed for the programming and erase operations. reading data out of the device is similar to reading from other flash or eprom devices. device programming occurs by executing the program command sequence. this initiates the embedded program algorithman internal algorithm that auto- matically times the program pulse widths and verifies proper cell margin. the unlock bypass mode facili- tates faster programming times by requiring only two write cycles to program data instead of four. device erasure occurs by executing the erase com- mand sequence. this initiates the embedded erase algorithman internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. during erase, the device automatically times the erase pulse widths and verifies proper cell margin. the versatilei/o? (v io ) control allows the system to set the output voltage levels generated by the device, as well as the input voltages tolerated by the device, to the same voltage level that is asserted on the v io pin. this allows the device to operate in 1.8 v, 3 v, or 5 v system environment as required. the host system can detect whether a program or erase operation is complete by observing the ry/by# pin, by reading the dq7 (data# polling), or dq6 (tog- gle) status bits . after a program or erase cycle has been completed, the device is ready to read array data or accept another command. the sector erase architecture allows memory sec- tors to be erased and reprogrammed without affecting the data contents of other sectors. the device is fully erased when shipped from the factory. hardware data protection measures include a low v cc detector that automatically inhibits write opera- tions during power transitions. the hardware sector protection feature disables both program and erase operations in any combination of sectors of memory. this can be achieved in-system or via programming equipment. the erase suspend/erase resume feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. true background erase can thus be achieved. the hardware reset# pin terminates any operation in progress and resets the internal state machine to reading array data. the reset# pin may be tied to the system reset circuitry. a system reset would thus also reset the device, enabling the system micropro- cessor to read boot-up firmware from the flash mem- ory device. the device offers a standby mode as a power-saving feature. once the system places the device into the standby mode power consumption is greatly reduced. the secsi (secured silicon) sector provides an minimum 128-word area for code or data that can be permanently protected. once this sector is protected, no further programming or erasing within the sector can occur. the write protect (wp#) feature protects the first or last sector by asserting a logic low on the wp# pin. the protected sector will still be protected even during accelerated programming. the accelerated program (acc) feature allows the system to program the device at a much faster rate. when acc is pulled high to v hh , the device enters the unlock bypass mode, enabling the user to reduce the time needed to do the program operation. this feature is intended to increase factory throughput during sys- tem production, but may also be used in the field if de- sired. amds flash technology combines years of flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effective- ness. the device electrically erases all bits within a sector simultaneously via fowler-nordheim tunnelling. the data is programmed using hot electron injection.
am29lv640du/am29lv641du 3 advance information product selector guide note: see ac characteristics for full specifications. block diagram notes: 1. ry/by# is only available in the fbga package. 2. wp# is only available in the tsop and ssop packages. part number am29lv640du/am29lv641du speed option standard voltage range: v cc = 2.7C3.6 v 90 120 150 max access time (ns) 90 120 150 ce# access time (ns) 90 120 150 oe# access time (ns) 35 50 70 input/output buffers x-decoder y-decoder chip enable output enable logic erase voltage generator pgm voltage generator timer v cc detector state control command register v cc v ss we# wp# (note 2) acc ce# oe# stb stb dq0 C dq15 sector switches ry/by# (note 1) reset# data latch y-gating cell matrix address latch a0Ca21 22366a-1 v io
4 am29lv640du/am29lv641du advance information connection diagrams 1 16 2 3 4 5 6 7 8 17 18 19 20 21 22 23 24 9 10 11 12 13 14 15 48 33 47 46 45 44 43 42 41 40 39 38 37 36 35 34 25 32 31 30 29 28 27 26 a15 a18 a14 a13 a12 a11 a10 a9 a8 a21 a20 we# reset# acc wp# a19 a1 a17 a7 a6 a5 a4 a3 a2 a16 dq2 v i/o v ss dq15 dq7 dq14 dq6 dq13 dq9 dq1 dq8 dq0 oe# v ss ce# a0 dq5 dq12 dq4 v cc dq11 dq3 dq10 48-pin standard tsop (am29lv641 only) 22366a-1 1 16 2 3 4 5 6 7 8 17 18 19 20 21 22 23 24 9 10 11 12 13 14 15 48 33 47 46 45 44 43 42 41 40 39 38 37 36 35 34 25 32 31 30 29 28 27 26 a15 a18 a14 a13 a12 a11 a10 a9 a8 a21 a20 we# reset# acc wp# a19 a1 a17 a7 a6 a5 a4 a3 a2 a16 dq2 v i/o v ss dq15 dq7 dq14 dq6 dq13 dq9 dq1 dq8 dq0 oe# v ss ce# a0 dq5 dq12 dq4 v cc dq11 dq3 dq10 48-pin reverse tsop (am29lv641 only) 22366a-2
am29lv640du/am29lv641du 5 advance information connection diagrams 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 acc wp# a19 a18 a17 a7 a6 a5 a4 a3 a2 a1 nc nc nc nc a0 ce# v ss oe# dq0 dq8 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 reset# we# a20 a21 a8 a9 a10 a11 a12 a13 a14 a15 nc nc nc nc a16 v i/o v ss dq15 dq7 dq14 23 24 25 26 27 28 dq1 dq9 dq2 dq10 dq3 dq11 34 33 32 31 30 29 dq6 dq13 dq5 dq12 dq4 v cc 22366a-3 56-pin ssop (am29lv640 only)
6 am29lv640du/am29lv641du advance information connection diagrams special handling instructions for fbga package special handling is required for flash memory products in fbga packages. flash memory devices in fbga packages may be damaged if exposed to ultrasonic cleaning methods. the package and/or data integrity may be compromised if the package body is exposed to temperatures above 150 c for prolonged periods of time. c2 d2 e2 f2 g2 h2 j2 k2 c3 d3 e3 f3 g3 h3 j3 k3 c4 d4 e4 f4 g4 h4 j4 k4 c5 d5 e5 f5 g5 h5 j5 k5 c6 d6 e6 f6 g6 h6 j6 k6 c7 d7 a7 b7 a8 b8 a1 b1 a2 e7 f7 g7 h7 j7 k7 l7 l8 m7 m8 l1 l2 m1 m2 nc* nc* nc* nc* nc* nc* nc* nc* nc* nc* nc* nc nc nc nc dq15 v ss v i/o a16 a15 a14 a12 a13 dq13 dq6 dq14 dq7 a11 a10 a8 a9 v cc dq4 dq12 dq5 a19 a21 reset# we# dq11 dq3 dq10 dq2 a20 a18 acc ry/by# dq9 dq1 dq8 dq0 a5 a6 a17 a7 oe# v ss ce# a0 a1 a2 a4 a3 * balls are shorted together via the substrate but not connected to the die. 63-ball fbga top view, balls facing down (am29lv640 only) 22366a-4
am29lv640du/am29lv641du 7 advance information pin description a0Ca21 = 22 addresses inputs dq0Cdq15 = 16 data inputs/outputs ce# = chip enable input oe# = output enable input we# = write enable input wp# = hardware write protect input (n/a on fbga) acc = acceleration input reset# = hardware reset pin input ry/by# = ready/busy output (fbga only) v cc = 3.0 volt-only single power supply (see product selector guide for speed options and voltage supply tolerances) v io = output buffer power v ss = device ground nc = pin not connected internally logic symbol note: wp# is not available on the fbga package. ry/by# is not available on the tsop and ssop packages. 22366a-5 22 16 dq0Cdq15 a0Ca21 ce# oe# we# reset# v io ry/by# acc wp#
8 am29lv640du/am29lv641du advance information ordering information standard products amd standard products are available in several packages and operating ranges. the order number (valid combination) is formed by a combination of the following: * due to the feature variations offered by this device, the u designator is replaced by an h or l when the wp# feature is available. valid combinations valid combinations list configurations planned to be sup- ported in volume for this device. consult the local amd sales office to confirm availability of specific valid combinations and to check on newly released combinations. am29lv640d/am29lv641d h 90 e i n optional processing blank = standard processing b=burn-in n = 32-byte esn devices (contact an amd representative for more information) temperature range i = industrial (C40 c to +85 c) e = extended (C55 c to +125 c) package type e = 48-pin thin small outline package (tsop) standard pinout (ts 048) f = 48-pin thin small outline package (tsop) reverse pinout (tsr048) z = 56-pin shrink small outline package (sso056) wh = 63-ball fine-pitch ball grid array (fbga) 0.80 mm pitch, 11 x 12 mm package (fbe063) speed option see product selector guide and valid combinations sector architecture and sector write protection (wp# = 0) h = uniform sector device, highest address sector protected l = uniform sector device, lowest address sector protected u = uniform sector device (wp# not available) device number/description am29lv640du/am29lv641du 64 megabit (4 m x 16-bit) cmos uniform sector flash memory with versatilei/o control 3.0 volt-only read, program, and erase valid combinations for tsop and ssop packages* am29lv640dh90, am29lv640dl90 zi am29lv641dh90, am29lv641dl90 ei, fi am29lv640dh12, am29lv640dl12 zi, ze am29lv641dh12, am29lv641dl12 ei, fi, ee, fe am29lv640dh15, am29lv640dl15 zi, ze am29lv641dh15, am29lv641dl15 ei, fi, ee, fe valid combinations for fbga packages order number package marking am29lv640du90 whi l640du90v i am29lv640du12 whi, whe l640du12v i, e am29lv640du15 l640du15v
am29lv640du/am29lv641du 9 advance information device bus operations this section describes the requirements and use of the device bus operations, which are initiated through the internal command register. the command register itself does not occupy any addressable memory loca- tion. the register is a latch used to store the com- mands, along with the address and data information needed to execute the command. the contents of the register serve as inputs to the internal state machine. the state machine outputs dictate the function of the device. table 1 lists the device bus operations, the in- puts and control levels they require, and the resulting output. the following subsections describe each of these operations in further detail. table 1. am29lv640du/am29lv641du device bus operations legend: l = logic low = v il , h = logic high = v ih , v id and v hh = 8.5 C12.5 v, x = dont care, sa = sector address, a in = address in, d in = data in, d out = data out notes: 1. addresses are a21:a0. sector addresses are a21:a15. 2. the sector protect and sector unprotect functions may also be implemented via programming equipment. see the sector group protection and unprotection section. 3. if wp# = v il , the first or last sector remains protected. if wp# = v ih , the first or last sector will be protected or unprotected as determined by the method described in sector group protection and unprotection. all sectors are unprotected when shipped from the factory (the secsi sector may be factory protected depending on version ordered.) 4. d in or d out as required by command sequence, data polling, or sector protect algorithm (see figure 2). versatilei/o (v ccq ) control the versatilei/o (v ccq ) control allows the system to set the output voltage levels generated by the device, as well as the input voltages tolerated by the device, to the same voltage level that is asserted on the v io (v ccq ) pin. this allows the device to operate in 1.8 v, 3 v, or 5 v system environments as required. for example, a v io of 4.5C5.5 volts allows for i/o at the 5 volt level, driving and receiving signals to and from other 5 v devices on the same bus. for additional information on the versatile i/o feature, contact amd. requirements for reading array data to read array data from the outputs, the system must drive the ce# and oe# pins to v il . ce# is the power control and selects the device. oe# is the output con- trol and gates array data to the output pins. we# should remain at v ih . the internal state machine is set for reading array data upon device power-up, or after a hardware reset. this ensures that no spurious alteration of the memory content occurs during the power transition. no com- mand is necessary in this mode to obtain array data. operation ce# oe# we# reset# wp# acc addresses (note 2) dq0C dq15 read l l h h xx a in d out write (program/erase) l h l h (note 3) x a in (note 4) accelerated program l h l h (note 3) v hh a in (note 4) standby v cc 0.3 v xx v cc 0.3 v xh x high-z output disable l h h h xx x high-z reset x x x l xx x high-z sector group protect (note 2) l h l v id hx sa, a6 = l, a1 = h, a0 = l (note 4) sector group unprotect (note 2) lhl v id hx sa, a6 = h, a1 = h, a0 = l (note 4) temporary sector group unprotect xxx v id hx a in (note 4)
10 am29lv640du/am29lv641du advance information standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. the device remains enabled for read access until the command register contents are altered. see requirements for reading array data for more information. refer to the ac read-only operations table for timing specifications and to figure 13 for the timing diagram. i cc1 in the dc characteristics table represents the active current specification for reading array data. writing commands/command sequences to write a command or command sequence (which in- cludes programming data to the device and erasing sectors of memory), the system must drive we# and ce# to v il , and oe# to v ih . the device features an unlock bypass mode to facili- tate faster programming. once the device enters the unlock bypass mode, only two write cycles are re- quired to program a word or byte, instead of four. the word program command sequence section has de- tails on programming data to the device using both standard and unlock bypass command sequences. an erase operation can erase one sector, multiple sec- tors, or the entire device. table 2 indicates the address space that each sector occupies. i cc2 in the dc characteristics table represents the ac- tive current specification for the write mode. the ac characteristics section contains timing specification tables and timing diagrams for write operations. accelerated program operation the device offers accelerated program operations through the acc function. this function is primarily in- tended to allow faster manufacturing throughput dur- ing system production. if the system asserts v hh on this pin, the device auto- matically enters the aforementioned unlock bypass mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for program operations. the system would use a two-cycle program command sequence as required by the unlock bypass mode. removing v hh from the acc pin returns the device to normal op- eration. autoselect functions if the system writes the autoselect command se- quence, the device enters the autoselect mode. the system can then read autoselect codes from the inter- nal register (which is separate from the memory array) on dq7Cdq0. standard read cycle timings apply in this mode. refer to the autoselect mode and autose- lect command sequence sections for more informa- tion. standby mode when the system is not reading or writing to the de- vice, it can place the device in the standby mode. in this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the oe# input. the device enters the cmos standby mode when the ce# and reset# pins are both held at v cc 0.3 v. (note that this is a more restricted voltage range than v ih .) if ce# and reset# are held at v ih , but not within v cc 0.3 v, the device will be in the standby mode, but the standby current will be greater. the device re- quires standard access time (t ce ) for read access when the device is in either of these standby modes, before it is ready to read data. if the device is deselected during erasure or program- ming, the device draws active current until the operation is completed. i cc3 in the dc characteristics table represents the standby current specification. automatic sleep mode the automatic sleep mode minimizes flash device en- ergy consumption. the device automatically enables this mode when addresses remain stable for t acc + 30 ns. the automatic sleep mode is independent of the ce#, we#, and oe# control signals. standard ad- dress access timings provide new data when ad- dresses are changed. while in sleep mode, output data is latched and always available to the system. i cc4 in the dc characteristics table represents the automatic sleep mode current specification. reset#: hardware reset pin the reset# pin provides a hardware method of re- setting the device to reading array data. when the re- set# pin is driven low for at least a period of t rp , the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/write commands for the duration of the reset# pulse. the device also resets the internal state ma- chine to reading array data. the operation that was in- terrupted should be reinitiated once the device is ready to accept another command sequence, to en- sure data integrity. current is reduced for the duration of the reset# pulse. when reset# is held at v ss 0.3 v, the device draws cmos standby current (i cc4 ). if reset# is held at v il but not within v ss 0.3 v, the standby current will be greater.
am29lv640du/am29lv641du 11 advance information the reset# pin may be tied to the system reset cir- cuitry. a system reset would thus also reset the flash memory, enabling the system to read the boot-up firm- ware from the flash memory. if reset# is asserted during a program or erase op- eration, the ry/by# pin remains a 0 (busy) until the internal reset operation is complete, which requires a time of t ready (during embedded algorithms). the sys- tem can thus monitor ry/by# to determine whether the reset operation is complete. if reset# is asserted when a program or erase operation is not executing (ry/by# pin is 1), the reset operation is completed within a time of t ready (not during embedded algo- rithms). the system can read data t rh after the re- set# pin returns to v ih . refer to the ac characteristics tables for reset# pa- rameters and to figure 14 for the timing diagram. output disable mode when the oe# input is at v ih , output from the device is disabled. the output pins are placed in the high impedance state. table 2. sector address table sector a21 a20 a19 a18 a17 a16 a15 16-bit address range (in hexadecimal) sa0 0000000 000000C007fff sa1 0000001 008000C00ffff sa2 0000010 010000C017fff sa3 0000011 018000C01ffff sa4 0000100 020000C027fff sa5 0000101 028000C02ffff sa6 0000110 030000C037fff sa7 0000111 038000C03ffff sa8 0001000 040000C047fff sa9 0001001 048000C04ffff sa10 0001010 050000C057fff sa11 0001011 058000C05ffff sa12 0001100 060000C067fff sa13 0001101 068000C06ffff sa14 0001110 070000C077fff sa15 0001111 078000C07ffff sa16 0010000 080000C087fff sa17 0010001 088000C08ffff sa18 0010010 090000C097fff sa19 0010011 098000C09ffff sa20 0010100 0a0000C0a7fff sa21 0010101 0a8000C0affff sa22 0010110 0b0000C0b7fff sa23 0010111 0b8000C0bffff sa24 0011000 0c0000C0c7fff sa25 0011001 0c8000C0cffff
12 am29lv640du/am29lv641du advance information sa26 0011010 0d0000C0d7fff sa27 0011011 0d8000C0dffff sa28 0011100 0e0000C0e7fff sa29 0011101 0e8000C0effff sa30 0011110 0f0000C0f7fff sa31 0011111 0f8000C0fffff sa32 0100000 100000C107fff sa33 0100001 108000C10ffff sa34 0100010 110000C117fff sa35 0100011 118000C11ffff sa36 0100100 120000C127fff sa37 0100101 128000C12ffff sa38 0100110 130000C137fff sa39 0100111 138000C13ffff sa40 0101000 140000C147fff sa41 0101001 148000C14ffff sa42 0101010 150000C157fff sa43 0101011 158000C15ffff sa44 0101100 160000C167fff sa45 0101101 168000C16ffff sa46 0101110 170000C177fff sa47 0101111 178000C17ffff sa48 0110000 180000C187fff sa49 0110001 188000C18ffff sa50 0110010 190000C197fff sa51 0110011 198000C19ffff sa52 0110100 1a0000C1a7fff sa53 0110101 1a8000C1affff sa54 0110110 1b0000C1b7fff sa55 0110111 1b8000C1bffff sa56 0111000 1c0000C1c7fff sa57 0111001 1c8000C1cffff sa58 0111010 1d0000C1d7fff sa59 0111011 1d8000C1dffff sa60 0111100 1e0000C1e7fff table 2. sector address table (continued) sector a21 a20 a19 a18 a17 a16 a15 16-bit address range (in hexadecimal)
am29lv640du/am29lv641du 13 advance information sa61 0111101 1e8000C1effff sa62 0111110 1f0000C1f7fff sa63 0111111 1f8000C1fffff sa64 1000000 200000C207fff sa65 1000001 208000C20ffff sa66 1000010 210000C217fff sa67 1000011 218000C21ffff sa68 1000100 220000C227fff sa69 1000101 228000C22ffff sa70 1000110 230000C237fff sa71 1000111 238000C23ffff sa72 1001000 240000C247fff sa73 1001001 248000C24ffff sa74 1001010 250000C257fff sa75 1001011 258000C25ffff sa76 1001100 260000C267fff sa77 1001101 268000C26ffff sa78 1001110 270000C277fff sa79 1001111 278000C27ffff sa80 1010000 280000C287fff sa81 1010001 288000C28ffff sa82 1010010 290000C297fff sa83 1010011 298000C29ffff sa84 1010100 2a0000C2a7fff sa85 1010101 2a8000C2affff sa86 1010110 2b0000C2b7fff sa87 1010111 2b8000C2bffff sa88 1011000 2c0000C2c7fff sa89 1011001 2c8000C2cffff sa90 1011010 2d0000C2d7fff sa91 1011011 2d8000C2dffff sa92 1011100 2e0000C2e7fff sa93 1011101 2e8000C2effff sa94 1011110 2f0000C2f7fff sa95 1011111 2f8000C2fffff table 2. sector address table (continued) sector a21 a20 a19 a18 a17 a16 a15 16-bit address range (in hexadecimal)
14 am29lv640du/am29lv641du advance information note: all sectors are 32 kwords in size. sa96 1100000 300000C307fff sa97 1100001 308000C30ffff sa98 1100010 310000C317fff sa99 1100011 318000C31ffff sa100 1100100 320000C327fff sa101 1100101 328000C32ffff sa102 1100110 330000C337fff sa103 1100111 338000C33ffff sa104 1101000 340000C347fff sa105 1101001 348000C34ffff sa106 1101010 350000C357fff sa107 1101011 358000C35ffff sa108 1101100 360000C367fff sa109 1101101 368000C36ffff sa110 1101110 370000C377fff sa111 1101111 378000C37ffff sa112 1110000 380000C387fff sa113 1110001 388000C38ffff sa114 1110010 390000C397fff sa115 1110011 398000C39ffff sa116 1110100 3a0000C3a7fff sa117 1110101 3a8000C3affff sa118 1110110 3b0000C3b7fff sa119 1110111 3b8000C3bffff sa120 1111000 3c0000C3c7fff sa121 1111001 3c8000C3cffff sa122 1111010 3d0000C3d7fff sa123 1111011 3d8000C3dffff sa124 1111100 3e0000C3e7fff sa125 1111101 3e8000C3effff sa126 1111110 3f0000C3f7fff sa127 1111111 3f8000C3fffff table 2. sector address table (continued) sector a21 a20 a19 a18 a17 a16 a15 16-bit address range (in hexadecimal)
am29lv640du/am29lv641du 15 advance information autoselect mode the autoselect mode provides manufacturer and de- vice identification, and sector protection verification, through identifier codes output on dq7Cdq0. this mode is primarily intended for programming equip- ment to automatically match a device to be pro- grammed with its corresponding programming algorithm. however, the autoselect codes can also be accessed in-system through the command register. when using programming equipment, the autoselect mode requires v id (8.5 v to 12.5 v) on address pin a9. address pins a6, a1, and a0 must be as shown in table 3. in addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits (see table 2). table 3 shows the remaining address bits that are dont care. when all necessary bits have been set as required, the programming equipment may then read the corre- sponding identifier code on dq7Cdq0. to access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in table 10. this method does not require v id . refer to the autoselect com- mand sequence section for more information. table 3. am29lv640du/am29lv641du autoselect codes, (high voltage method) legend: l = logic low = v il , h = logic high = v ih , sa = sector address, x = dont care. description ce# oe# we# a21 to a15 a14 to a10 a9 a8 to a7 a6 a5 to a2 a1 a0 dq15 to dq0 manufacturer id : amd l l h x x v id xlxll 0001h device id: am29lv640du/ am29lv641du llh x xv id xlxlh 22d7h sector protection verification llhsaxv id xlxhl xx01h (protected), xx00h (unprotected) secsi indicator bit (dq7), wp# protects highest address sector llh x xv id xlxhh xx98h (factory locked), xx18h (not factory locked) secsi indicator bit (dq7), wp# protects lowest address sector llh x xv id xlxhh xx88h (factory locked), xx08h (not factory locked)
16 am29lv640du/am29lv641du advance information sector group protection and unprotection the hardware sector group protection feature disables both program and erase operations in any sector group. in this device, a sector group consists of four adjacent sectors that are protected or unprotected at the same time (see table 4). the hardware sector group unprotection feature re-enables both program and erase operations in previously protected sector groups. sector group protection/unprotection can be implemented via two methods. the primary method requires v id on the reset# pin only, and can be implemented either in-system or via programming equipment. figure 2 shows the algo- rithms and figure 22 shows the timing diagram. this method uses standard microprocessor bus cycle tim- ing. for sector group unprotect, all unprotected sector groups must first be protected prior to the first sector group unprotect write cycle. the alternate method intended only for programming equipment requires v id on address pin a9 and oe#. this method is compatible with programmer routines written for earlier 3.0 volt-only amd flash devices. publication number 22367 contains further details; contact an amd representative to request a copy. the device is shipped with all sector groups unpro- tected. amd offers the option of programming and pro- tecting sector groups at its factory prior to shipping the device through amds expressflash? service. con- tact an amd representative for details. it is possible to determine whether a sector group is protected or unprotected. see the autoselect mode section for details. table 4. sector group protection/unprotection address table note: all sector groups are 128 kwords in size. sector group a21Ca17 sa0Csa3 00000 sa4Csa7 00001 sa8Csa11 00010 sa12Csa15 00011 sa16Csa19 00100 sa20Csa23 00101 sa24Csa27 00110 sa28Csa31 00111 sa32Csa35 01000 sa36Csa39 01001 sa40Csa43 01010 sa44Csa47 01011 sa48Csa51 01100 sa52Csa55 01101 sa56Csa59 01110 sa60Csa63 01111 sa66Csa69 10000 sa70Csa73 10001 sa74Csa79 10010 sa80Csa83 10011 sa84Csa87 10100 sa88Csa91 10101 sa92Csa95 10110 sa96Csa99 10111 sa100Csa103 11000 sa104Csa107 11001 sa108Csa111 11010 sa112Csa115 11011 sa116Csa119 11100 sa120Csa123 11101 sa124Csa127 11110
am29lv640du/am29lv641du 17 advance information write protect (wp#) the write protect function provides a hardware method of protecting the first or last sector without using v id . if the system asserts v il on the wp# pin, the device disables program and erase functions in the first or last sector independently of whether those sectors were protected or unprotected using the method described in sector group protection and unprotection. if the system asserts v ih on the wp# pin, the device reverts to whether the first or last sector was previ- ously set to be protected or unprotected using the method described in sector group protection and unprotection. temporary sector group unprotect ( note: in this device, a sector group consists of four adjacent sectors that are protected or unprotected at the same time (see table 4)). this feature allows temporary unprotection of previ- ously protected sector groups to change data in-sys- tem. the sector group unprotect mode is activated by setting the reset# pin to v id (8.5 v C 12.5 v). during this mode, formerly protected sector groups can be programmed or erased by selecting the sector group addresses. once v id is removed from the reset# pin, all the previously protected sector groups are protected again. figure 1 shows the algorithm, and figure 21 shows the timing diagrams, for this feature. figure 1. temporary sector group unprotect operation start perform erase or program operations reset# = v ih temporary sector group unprotect completed (note 2) reset# = v id (note 1) 22366a-6 notes: 1. all protected sector groups unprotected (if wp# = v il , the first or last sector will remain protected). 2. all previously protected sector groups are protected once again.
18 am29lv640du/am29lv641du advance information figure 2. in-system sector group protect/unprotect algorithms sector group protect: write 60h to sector group address with a6 = 0, a1 = 1, a0 = 0 set up sector group address wait 150 s verify sector group protect: write 40h to sector group address twith a6 = 0, a1 = 1, a0 = 0 read from sector group address with a6 = 0, a1 = 1, a0 = 0 start plscnt = 1 reset# = v id wait 1 m s first write cycle = 60h? data = 01h? remove v id from reset# write reset command sector group protect complete yes yes no plscnt = 25? yes device failed increment plscnt temporary sector group unprotect mode no sector group unprotect: write 60h to sector group address with a6 = 1, a1 = 1, a0 = 0 set up first sector group address wait 15 ms verify sector group unprotect: write 40h to sector group address with a6 = 1, a1 = 1, a0 = 0 read from sector group address with a6 = 1, a1 = 1, a0 = 0 start plscnt = 1 reset# = v id wait 1 m s data = 00h? last sector group verified? remove v id from reset# write reset command sector group unprotect complete yes no plscnt = 1000? yes device failed increment plscnt temporary sector group unprotect mode no all sector groups protected? yes protect all sector groups: the indicated portion of the sector group protect algorithm must be performed for all unprotected sector groups prior to issuing the first sector group unprotect address set up next sector group address no yes no yes no no yes no sector group protect algorithm sector group unprotect algorithm first write cycle = 60h? protect another sector group? reset plscnt = 1 22366a-7
am29lv640du/am29lv641du 19 advance information secsi (secured silicon) sector flash memory region the secsi (secured silicon) sector feature provides a flash memory region that enables permanent part identification through an electronic serial number (esn). the secsi sector is 128 words in length, and uses a secsi sector indicator bit (dq7) to indicate whether or not the secsi sector is locked when shipped from the factory. this bit is permanently set at the factory and cannot be changed, which prevents cloning of a factory locked part. this ensures the secu- rity of the esn once the product is shipped to the field. amd offers the device with the secsi sector either factory locked or customer lockable. the fac- tory-locked version is always protected when shipped from the factory, and has the secsi (secured silicon) sector indicator bit permanently set to a 1. the cus- tomer-lockable version is shipped with the secsi sec- tor unprotected, allowing customers to utilize that sector in any manner they choose. the customer-lock- able version also has the secsi sector indicator bit permanently set to a 0. thus, the secsi sector indi- cator bit prevents customer-lockable devices from being used to replace devices that are factory locked. the secsi sector address space in this device is allo- cated as follows: the system accesses the secsi sector through a command sequence (see enter secsi sector/exit secsi sector command sequence). after the system has written the enter secsi sector command se- quence, it may read the secsi sector by using the ad- dresses normally occupied by the first sector (sa0). this mode of operation continues until the system is- sues the exit secsi sector command sequence, or until power is removed from the device. on power-up, or following a hardware reset, the device reverts to sending commands to sector sa0. factory locked: secsi sector programmed and protected at the factory in devices with an esn, the secsi sector is protected when the device is shipped from the factory. the secsi sector cannot be modified in any way. a factory locked device has an 8-word random esn at addresses 000000hC000007h. customers may opt to have their code programmed by amd through the amd expressflash service. the de- vices are then shipped from amds factory with the secsi sector permanently locked. contact an amd representative for details on using amds express- flash service. customer lockable: secsi sector not programmed or protected at the factory as an alternative to the factory-locked version, the de- vice may be ordered such that the customer may pro- gram and protect the 128-word secsi sector. programming and protecting the secsi sector must be used with caution since, once protected, there is no procedure available for unprotecting the secsi sector area and none of the bits in the secsi sector memory space can be modified in any way. the secsi sector area can be protected using one of the following procedures: n write the three-cycle enter secsi sector region command sequence, and then follow the in-system sector protect algorithm as shown in figure 2, ex- cept that reset# may be at either v ih or v id . this allows in-system protection of the secsi sector without raising any device pin to a high voltage. note that this method is only applicable to the secsi sector. n write the three-cycle enter secsi sector region command sequence, and then use the alternate method of sector protection described in the sector group protection and unprotection section. once the secsi sector is programmed, locked and verified, the system must write the exit secsi sector region command sequence to return to reading and writing the remainder of the array. hardware data protection the command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to table 10 for com- mand definitions). in addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during v cc power-up and power-down transitions, or from system noise. low v cc write inhibit when v cc is less than v lko , the device does not ac- cept any write cycles. this protects data during v cc power-up and power-down. the command register and all internal program/erase circuits are disabled, and the device resets to the read mode. subsequent writes are ignored until v cc is greater than v lko . the system must provide the proper signals to the control pins to prevent unintentional writes when v cc is greater than v lko . table 5. secsi sector contents secsi sector address range standard factory locked expressflash factory locked customer lockable 000000hC000007h esn esn or determined by customer determined by customer 000008hC0000ffh unavailable determined by customer
20 am29lv640du/am29lv641du advance information write pulse glitch protection noise pulses of less than 5 ns (typical) on oe#, ce# or we# do not initiate a write cycle. logical inhibit write cycles are inhibited by holding any one of oe# = v il , ce# = v ih or we# = v ih . to initiate a write cycle, ce# and we# must be a logical zero while oe# is a logical one. power-up write inhibit if we# = ce# = v il and oe# = v ih during power up, the device does not accept commands on the rising edge of we#. the internal state machine is automati- cally reset to the read mode on power-up. common flash memory interface (cfi) the common flash interface (cfi) specification out- lines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. software support can then be device-inde- pendent, jedec id-independent, and forward- and backward-compatible for the specified flash device families. flash vendors can standardize their existing interfaces for long-term compatibility. this device enters the cfi query mode when the sys- tem writes the cfi query command, 98h, to address 55h, any time the device is ready to read array data. the system can read cfi information at the addresses given in tables 6C9. to terminate reading cfi data, the system must write the reset command. the system can also write the cfi query command when the device is in the autoselect mode. the device enters the cfi query mode, and the system can read cfi data at the addresses given in tables 6C9. the system must write the reset command to return the device to the autoselect mode. for further information, please refer to the cfi specifi- cation and cfi publication 100, available via the world wide web at http://www.amd.com/products/nvd/over- view/cfi.html. alternatively, contact an amd represen- tative for copies of these documents. table 6. cfi query identification string addresses (x16) data description 10h 11h 12h 0051h 0052h 0059h query unique ascii string qry 13h 14h 0002h 0000h primary oem command set 15h 16h 0040h 0000h address for primary extended table 17h 18h 0000h 0000h alternate oem command set (00h = none exists) 19h 1ah 0000h 0000h address for alternate oem extended table (00h = none exists)
am29lv640du/am29lv641du 21 advance information table 7. system interface string table 8. device geometry definition addresses (x16) data description 1bh 0027h v cc min. (write/erase) d7Cd4: volt, d3Cd0: 100 millivolt 1ch 0036h v cc max. (write/erase) d7Cd4: volt, d3Cd0: 100 millivolt 1dh 0000h v pp min. voltage (00h = no v pp pin present) 1eh 0000h v pp max. voltage (00h = no v pp pin present) 1fh 0004h typical timeout per single byte/word write 2 n s 20h 0000h typical timeout for min. size buffer write 2 n s (00h = not supported) 21h 000ah typical timeout per individual block erase 2 n ms 22h 0000h typical timeout for full chip erase 2 n ms (00h = not supported) 23h 0005h max. timeout for byte/word write 2 n times typical 24h 0000h max. timeout for buffer write 2 n times typical 25h 0004h max. timeout per individual block erase 2 n times typical 26h 0000h max. timeout for full chip erase 2 n times typical (00h = not supported) addresses (x16) data description 27h 0017h device size = 2 n byte 28h 29h 0001h 0000h flash device interface description (refer to cfi publication 100) 2ah 2bh 0000h 0000h max. number of byte in multi-byte write = 2 n (00h = not supported) 2ch 0001h number of erase block regions within device 2dh 2eh 2fh 30h 007fh 0000h 0000h 0001h erase block region 1 information (refer to the cfi specification or cfi publication 100) 31h 32h 33h 34h 0000h 0000h 0000h 0000h erase block region 2 information (refer to cfi publication 100) 35h 36h 37h 38h 0000h 0000h 0000h 0000h erase block region 3 information (refer to cfi publication 100) 39h 3ah 3bh 3ch 0000h 0000h 0000h 0000h erase block region 4 information (refer to cfi publication 100)
22 am29lv640du/am29lv641du advance information table 9. primary vendor-specific extended query command definitions writing specific address and data commands or se- quences into the command register initiates device op- erations. table 10 defines the valid register command sequences. writing incorrect address and data val- ues or writing them in the improper sequence resets the device to reading array data. all addresses are latched on the falling edge of we# or ce#, whichever happens later. all data is latched on the rising edge of we# or ce#, whichever happens first. refer to the ac characteristics section for timing diagrams. reading array data the device is automatically set to reading array data after device power-up. no commands are required to retrieve data. the device is ready to read array data after completing an embedded program or embedded erase algorithm. after the device accepts an erase suspend command, the device enters the erase-suspend-read mode, after which the system can read data from any non-erase-suspended sector. after completing a pro- gramming operation in the erase suspend mode, the system may once again read array data with the same exception. see the erase suspend/erase resume commands section for more information. the system must issue the reset command to return the device to the read (or erase-suspend-read) mode if dq5 goes high during an active program or erase op- eration, or if the device is in the autoselect mode. see the next section, reset command, for more informa- tion. addresses (x16) data description 40h 41h 42h 0050h 0052h 0049h query-unique ascii string pri 43h 0031h major version number, ascii 44h 0031h minor version number, ascii 45h 0000h address sensitive unlock (bits 1-0) 0 = required, 1 = not required silicon revision number (bits 7-2) 46h 0002h erase suspend 0 = not supported, 1 = to read only, 2 = to read & write 47h 0004h sector protect 0 = not supported, x = number of sectors in per group 48h 0001h sector temporary unprotect 00 = not supported, 01 = supported 49h 0004h sector protect/unprotect scheme 04 = 29lv800 mode 4ah 0000h simultaneous operation 00 = not supported, x = number of sectors in bank 4bh 0000h burst mode type 00 = not supported, 01 = supported 4ch 0000h page mode type 00 = not supported, 01 = 4 word page, 02 = 8 word page 4dh 00b5h acc (acceleration) supply minimum 00h = not supported, d7-d4: volt, d3-d0: 100 mv 4eh 00c5h acc (acceleration) supply maximum 00h = not supported, d7-d4: volt, d3-d0: 100 mv 4fh 0000h top/bottom boot sector flag 02h = bottom boot device, 03h = top boot device
am29lv640du/am29lv641du 23 advance information see also requirements for reading array data in the device bus operations section for more information. the read-only operations table provides the read pa- rameters, and figure 13 shows the timing diagram. reset command writing the reset command resets the device to the read or erase-suspend-read mode. address bits are dont cares for this command. the reset command may be written between the se- quence cycles in an erase command sequence before erasing begins. this resets the device to the read mode. once erasure begins, however, the device ig- nores reset commands until the operation is complete. the reset command may be written between the sequence cycles in a program command sequence before programming begins. this resets the device to the read mode. if the program command sequence is written while the device is in the erase suspend mode, writing the reset command returns the device to the erase-suspend-read mode. once programming be- gins, however, the device ignores reset commands until the operation is complete. the reset command may be written between the se- quence cycles in an autoselect command sequence. once in the autoselect mode, the reset command must be written to return to the read mode. if the de- vice entered the autoselect mode while in the erase suspend mode, writing the reset command returns the device to the erase-suspend-read mode. if dq5 goes high during a program or erase operation, writing the reset command returns the device to the read mode (or erase-suspend-read mode if the device was in erase suspend). autoselect command sequence the autoselect command sequence allows the host system to access the manufacturer and device codes, and determine whether or not a sector is protected. table 10 shows the address and data requirements. this method is an alternative to that shown in table 3, which is intended for prom programmers and re- quires v id on address pin a9. the autoselect com- mand sequence may be written to an address that is either in the read or erase-suspend-read mode. the autoselect command may not be written while the de- vice is actively programming or erasing. the autoselect command sequence is initiated by first writing two unlock cycles. this is followed by a third write cycle that contains the autoselect command. the device then enters the autoselect mode. the system may read at any address any number of times without initiating another autoselect command sequence: n a read cycle at address xx00h returns the manu- facturer code. n a read cycle at address xx01h returns the device code. n a read cycle to an address containing a sector group address (sa), and the address 02h on a7Ca0 in word mode returns 01h if the sector group is pro- tected, or 00h if it is unprotected. (refer to table 4 for valid sector addresses). the system must write the reset command to return to the read mode (or erase-suspend-read mode if the de- vice was previously in erase suspend). enter secsi sector/exit secsi sector command sequence the secsi sector region provides a secured data area containing an 8-word random electronic serial num- ber (esn). the system can access the secsi sector region by issuing the three-cycle enter secsi sector command sequence. the device continues to access the secsi sector region until the system issues the four-cycle exit secsi sector command sequence. the exit secsi sector command sequence returns the de- vice to normal operation. table 10 shows the address and data requirements for both command sequences. see also secsi (secured silicon) sector flash mem- ory region for further information. word program command sequence programming is a four-bus-cycle operation. the pro- gram command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. the program address and data are written next, which in turn initiate the embedded program al- gorithm. the system is not required to provide further controls or timings. the device automatically provides internally generated program pulses and verifies the programmed cell margin. table 10 shows the address and data requirements for the byte program command sequence. when the embedded program algorithm is complete, the device then returns to the read mode and ad- dresses are no longer latched. the system can deter- mine the status of the program operation by using dq7, dq6, or ry/by#. refer to the write operation status section for information on these status bits. any commands written to the device during the em- bedded program algorithm are ignored. note that a hardware reset immediately terminates the program operation. the program command sequence should be reinitiated once the device has returned to the read mode, to ensure data integrity. programming is allowed in any sequence and across sector boundaries. a bit cannot be programmed
24 am29lv640du/am29lv641du advance information from 0 back to a 1. attempting to do so may cause the device to set dq5 = 1, or cause the dq7 and dq6 status bits to indicate the operation was suc- cessful. however, a succeeding read will show that the data is still 0. only erase operations can convert a 0 to a 1. unlock bypass command sequence the unlock bypass feature allows the system to pro- gram words to the device faster than using the stan- dard program command sequence. the unlock bypass command sequence is initiated by first writing two un- lock cycles. this is followed by a third write cycle con- taining the unlock bypass command, 20h. the device then enters the unlock bypass mode. a two-cycle un- lock bypass program command sequence is all that is required to program in this mode. the first cycle in this sequence contains the unlock bypass program com- mand, a0h; the second cycle contains the program address and data. additional data is programmed in the same manner. this mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total program- ming time. table 10 shows the requirements for the command sequence. during the unlock bypass mode, only the unlock by- pass program and unlock bypass reset commands are valid. to exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset com- mand sequence. the first cycle must contain the data 90h. the second cycle must contain the data 00h. the device then returns to the read mode. the device offers accelerated program operations through the acc pin. when the system asserts v hh on the acc pin, the device automatically enters the un- lock bypass mode. the system may then write the two-cycle unlock bypass program command se- quence. the device uses the higher voltage on the acc pin to accelerate the operation. figure 3 illustrates the algorithm for the program oper- ation. refer to the erase and program operations table in the ac characteristics section for parameters, and figure 15 for timing diagrams. figure 3. program operation chip erase command sequence chip erase is a six bus cycle operation. the chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the embedded erase algorithm. the device does not require the system to preprogram prior to erase. the embedded erase algo- rithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. the system is not required to provide any con- trols or timings during these operations. table 10 shows the address and data requirements for the chip erase command sequence. start write program command sequence data poll from system verify data? no yes last address? no yes programming completed increment address embedded program algorithm in progress 22366a-8 note: see table 10 for program command sequence.
am29lv640du/am29lv641du 25 advance information when the embedded erase algorithm is complete, the device returns to the read mode and addresses are no longer latched. the system can determine the status of the erase operation by using dq7, dq6, dq2, or ry/by#. refer to the write operation status section for information on these status bits. any commands written during the chip erase operation are ignored. however, note that a hardware reset im- mediately terminates the erase operation. if that oc- curs, the chip erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. figure 4 illustrates the algorithm for the erase opera- tion. refer to the erase and program operations ta- bles in the ac characteristics section for parameters, and figure 17 section for timing diagrams. sector erase command sequence sector erase is a six bus cycle operation. the sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. two ad- ditional unlock cycles are written, and are then fol- lowed by the address of the sector to be erased, and the sector erase command. table 10 shows the ad- dress and data requirements for the sector erase com- mand sequence. the device does not require the system to preprogram prior to erase. the embedded erase algorithm auto- matically programs and verifies the entire memory for an all zero data pattern prior to electrical erase. the system is not required to provide any controls or tim- ings during these operations. after the command sequence is written, a sector erase time-out of 50 s occurs. during the time-out period, additional sector addresses and sector erase com- mands may be written. loading the sector erase buffer may be done in any sequence, and the number of sec- tors may be from one sector to all sectors. the time between these additional cycles must be less than 50 s, otherwise erasure may begin. any sector erase ad- dress and command following the exceeded time-out may or may not be accepted. it is recommended that processor interrupts be disabled during this time to en- sure all commands are accepted. the interrupts can be re-enabled after the last sector erase command is written. any command other than sector erase or erase suspend during the time-out period resets the device to the read mode. the system must re- write the command sequence and any additional ad- dresses and commands. the system can monitor dq3 to determine if the sec- tor erase timer has timed out (see the section on dq3: sector erase timer.). the time-out begins from the ris- ing edge of the final we# pulse in the command sequence. when the embedded erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. note that while the embedded erase operation is in progress, the system can read data from the non-erasing sector. the system can de- termine the status of the erase operation by reading dq7, dq6, dq2, or ry/by# in the erasing sector. refer to the write operation status section for infor- mation on these status bits. once the sector erase operation has begun, only the erase suspend command is valid. all other com- mands are ignored. however, note that a hardware reset immediately terminates the erase operation. if that occurs, the sector erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. figure 4 illustrates the algorithm for the erase opera- tion. refer to the erase and program operations ta- bles in the ac characteristics section for parameters, and figure 17 section for timing diagrams. erase suspend/erase resume commands the erase suspend command, b0h, allows the sys- tem to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. this command is valid only during the sec- tor erase operation, including the 50 s time-out pe- riod during the sector erase command sequence. the erase suspend command is ignored if written during the chip erase operation or embedded program algorithm. when the erase suspend command is written during the sector erase operation, the device requires a max- imum of 20 s to suspend the erase operation. how- ever, when the erase suspend command is written during the sector erase time-out, the device immedi- ately terminates the time-out period and suspends the erase operation. after the erase operation has been suspended, the device enters the erase-suspend-read mode. the sys- tem can read data from or program data to any sector not selected for erasure. (the device erase sus- pends all sectors selected for erasure.) reading at any address within erase-suspended sectors pro- duces status information on dq7Cdq0. the system can use dq7, or dq6 and dq2 together, to determine if a sector is actively erasing or is erase-suspended. refer to the write operation status section for infor- mation on these status bits. after an erase-suspended program operation is com- plete, the device returns to the erase-suspend-read mode. the system can determine the status of the program operation using the dq7 or dq6 status bits, just as in the standard word program operation.
26 am29lv640du/am29lv641du advance information refer to the write operation status section for more information. in the erase-suspend-read mode, the system can also issue the autoselect command sequence. refer to the autoselect mode and autoselect command sequence sections for details. to resume the sector erase operation, the system must write the erase resume command. the address of the erase-suspended sector is required when writ- ing this command. further writes of the resume com- mand are ignored. another erase suspend command can be written after the chip has resumed erasing. figure 4. erase operation start write erase command sequence (notes 1, 2) data poll to erasing bank from system data = ffh? no yes erasure completed embedded erase algorithm in progress 22366a-9 notes: 1. see table 10 for erase command sequence. 2. see the section on dq3 for information on the sector erase timer.
am29lv640du/am29lv641du 27 advance information table 10. am29lv640du/am29lv641du command definitions legend: x = dont care ra = address of the memory location to be read. rd = data read from location ra during read operation. pa = address of the memory location to be programmed. addresses latch on the falling edge of the we# or ce# pulse, whichever happens later. pd = data to be programmed at location pa. data latches on the rising edge of we# or ce# pulse, whichever happens first. sa = address of the sector to be verified (in autoselect mode) or erased. address bits a21Ca15 uniquely select any sector. notes: 1. see table 1 for description of bus operations. 2. all values are in hexadecimal. 3. except for the read cycle and the fourth cycle of the autoselect command sequence, all bus cycles are write cycles. 4. data bits dq15Cdq8 are dont care in command sequences, except for rd and pd. 5. unless otherwise noted, address bits a21Ca15 are dont cares. 6. no unlock or command cycles required when device is in read mode. 7. the reset command is required to return to the read mode (or to the erase-suspend-read mode if previously in erase suspend) when the device is in the autoselect mode, or if dq5 goes high (while the device is providing status information). 8. the fourth cycle of the autoselect command sequence is a read cycle. data bits dq15Cdq8 are dont care. see the autoselect command sequence section for more information. 9. if wp# protects the highest address sector, the data is 98h for factory locked and 18h for not factory locked. if wp# protects the lowest address sector, the data is 88h for factory locked and 08h for not factor locked. 10. the data is 00h for an unprotected sector group and 01h for a protected sector group. 11. the unlock bypass command is required prior to the unlock bypass program command. 12. the unlock bypass reset command is required to return to the read mode when the device is in the unlock bypass mode. 13. the system may read and program in non-erasing sectors, or enter the autoselect mode, when in the erase suspend mode. the erase suspend command is valid only during a sector erase operation. 14. the erase resume command is valid only during the erase suspend mode. 15. command is valid when device is ready to read array data or when device is in autoselect mode. command sequence (note 1) cycles bus cycles (notes 2C5) first second third fourth fifth sixth addr data addr data addr data addr data addr data addr data read (note 6) 1 ra rd reset (note 7) 1 xxx f0 autoselect (note 8) manufacturer id 4 555 aa 2aa 55 555 90 x00 0001 device id 4 555 aa 2aa 55 555 90 x01 22d7 secsi sector factory protect (note 9) 4 555 aa 2aa 55 555 90 x03 (see note 9) sector group protect verify (note 10) 4 555 aa 2aa 55 555 90 (sa)x02 xx00/ xx01 enter secsi sector region 3 555 aa 2aa 55 555 88 exit secsi sector region 4 555 aa 2aa 55 555 90 xxx 00 program 4 555 aa 2aa 55 555 a0 pa pd unlock bypass 3 555 aa 2aa 55 555 20 unlock bypass program (note 11) 2 xxx a0 pa pd unlock bypass reset (note 12) 2 xxx 90 xxx 00 chip erase 6 555 aa 2aa 55 555 80 555 aa 2aa 55 555 10 sector erase 6 555 aa 2aa 55 555 80 555 aa 2aa 55 sa 30 erase suspend (note 13) 1 ba b0 erase resume (note 14) 1 ba 30 cfi query (note 15) 1 55 98
28 am29lv640du/am29lv641du advance information write operation status the device provides several bits to determine the status of a program or erase operation: dq2, dq3, dq5, dq6, and dq7. table 11 and the following subsections describe the function of these bits. dq7 and dq6 each offer a method for determining whether a program or erase operation is com- plete or in progress. the device also provides a hard- ware-based output signal, ry/by#, to determine whether an embedded program or erase operation is in progress or has been completed. dq7: data# polling the data# polling bit, dq7, indicates to the host system whether an embedded program or erase algorithm is in progress or completed, or whether the device is in erase suspend. data# polling is valid after the rising edge of the final we# pulse in the command sequence. during the embedded program algorithm, the device out- puts on dq7 the complement of the datum programmed to dq7. this dq7 status also applies to programming during erase suspend. when the embedded program algorithm is complete, the device outputs the datum programmed to dq7. the system must provide the program address to read valid status information on dq7. if a program address falls within a protected sector, data# polling on dq7 is ac- tive for approximately 1 s, then the device returns to the read mode. during the embedded erase algorithm, data# polling produces a 0 on dq7. when the embedded erase algorithm is complete, or if the device enters the erase suspend mode, data# polling produces a 1 on dq7. the system must provide an address within any of the sectors selected for erasure to read valid status infor- mation on dq7. after an erase command sequence is written, if all sectors selected for erasing are protected, data# poll- ing on dq7 is active for approximately 100 s, then the device returns to the read mode. if not all selected sectors are protected, the embedded erase algorithm erases the unprotected sectors, and ignores the se- lected sectors that are protected. however, if the sys- tem reads dq7 at an address within a protected sector, the status may not be valid. just prior to the completion of an embedded program or erase operation, dq7 may change asynchronously with dq0Cdq6 while output enable (oe#) is asserted low. that is, the device may change from providing status information to valid data on dq7. depending on when the system samples the dq7 output, it may read the status or valid data. even if the device has com- pleted the program or erase operation and dq7 has valid data, the data outputs on dq0Cdq6 may be still invalid. valid data on dq0Cdq7 will appear on suc- cessive read cycles. table 11 shows the outputs for data# polling on dq7. figure 5 shows the data# polling algorithm. figure 18 in the ac characteristics section shows the data# polling timing diagram. figure 5. data# polling algorithm dq7 = data? yes no no dq5 = 1? no yes yes fail pass read dq7?q0 addr = va read dq7?q0 addr = va dq7 = data? start 22366a-10 notes: 1. va = valid address for programming. during a sector erase operation, a valid address is any sector address within the sector being erased. during chip erase, a valid address is any non-protected sector address. 2. dq7 should be rechecked even if dq5 = 1 because dq7 may change simultaneously with dq5.
am29lv640du/am29lv641du 29 advance information ry/by#: ready/busy# the ry/by# is a dedicated, open-drain output pin which indicates whether an embedded algorithm is in progress or complete. the ry/by# status is valid after the rising edge of the final we# pulse in the command sequence. since ry/by# is an open-drain output, sev- eral ry/by# pins can be tied together in parallel with a pull-up resistor to v cc . if the output is low (busy), the device is actively eras- ing or programming. (this includes programming in the erase suspend mode.) if the output is high (ready), the device is in the read mode, the standby mode, or the device is in the erase-suspend-read mode. table 11 shows the outputs for ry/by#. dq6: toggle bit i toggle bit i on dq6 indicates whether an embedded program or erase algorithm is in progress or com- plete, or whether the device has entered the erase suspend mode. toggle bit i may be read at any ad- dress, and is valid after the rising edge of the final we# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. during an embedded program or erase algorithm op- eration, successive read cycles to any address cause dq6 to toggle. the system may use either oe# or ce# to control the read cycles. when the operation is complete, dq6 stops toggling. after an erase command sequence is written, if all sectors selected for erasing are protected, dq6 toggles for approxi- mately 100 s, then returns to reading array data. if not all selected sectors are protected, the embedded erase algo- rithm erases the unprotected sectors, and ignores the se- lected sectors that are protected. the system can use dq6 and dq2 together to determine whether a sector is actively erasing or is erase-suspended. when the device is actively erasing (that is, the embedded erase algorithm is in progress), dq6 toggles. when the de- vice enters the erase suspend mode, dq6 stops toggling. however, the system must also use dq2 to determine which sectors are erasing or erase-suspended. alterna- tively, the system can use dq7 (see the subsection on dq7: data# polling). if a program address falls within a protected sector, dq6 toggles for approximately 1 m s after the program command sequence is written, then returns to reading array data. dq6 also toggles during the erase-suspend-program mode, and stops toggling once the embedded pro- gram algorithm is complete. table 11 shows the outputs for toggle bit i on dq6. figure 6 shows the toggle bit algorithm. figure 19 in the ac characteristics section shows the toggle bit timing diagrams. figure 20 shows the differences be- tween dq2 and dq6 in graphical form. see also the subsection on dq2: toggle bit ii. figure 6. toggle bit algorithm start no yes yes dq5 = 1? no yes toggle bit = toggle? no program/erase operation not complete, write reset command program/erase operation complete read dq7Cdq0 toggle bit = toggle? read dq7Cdq0 twice read dq7Cdq0 22366a-11 note: the system should recheck the toggle bit even if dq5 = 1 because the toggle bit may stop toggling as dq5 changes to 1. see the subsections on dq6 and dq2 for more information.
30 am29lv640du/am29lv641du advance information dq2: toggle bit ii the toggle bit ii on dq2, when used with dq6, indi- cates whether a particular sector is actively erasing (that is, the embedded erase algorithm is in progress), or whether that sector is erase-suspended. toggle bit ii is valid after the rising edge of the final we# pulse in the command sequence. dq2 toggles when the system reads at addresses within those sectors that have been selected for era- sure. (the system may use either oe# or ce# to con- trol the read cycles.) but dq2 cannot distinguish whether the sector is actively erasing or is erase-sus- pended. dq6, by comparison, indicates whether the device is actively erasing, or is in erase suspend, but cannot distinguish which sectors are selected for era- sure. thus, both status bits are required for sector and mode information. refer to table 11 to compare out- puts for dq2 and dq6. figure 6 shows the toggle bit algorithm in flowchart form, and the section dq2: toggle bit ii explains the algorithm. see also the dq6: toggle bit i subsection. figure 19 shows the toggle bit timing diagram. figure 20 shows the differences between dq2 and dq6 in graphical form. reading toggle bits dq6/dq2 refer to figure 6 for the following discussion. when- ever the system initially begins reading toggle bit sta- tus, it must read dq7Cdq0 at least twice in a row to determine whether a toggle bit is toggling. typically, the system would note and store the value of the tog- gle bit after the first read. after the second read, the system would compare the new value of the toggle bit with the first. if the toggle bit is not toggling, the device has completed the program or erase operation. the system can read array data on dq7Cdq0 on the fol- lowing read cycle. however, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the sys- tem also should note whether the value of dq5 is high (see the section on dq5). if it is, the system should then determine again whether the toggle bit is tog- gling, since the toggle bit may have stopped toggling just as dq5 went high. if the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. if it is still toggling, the de- vice did not completed the operation successfully, and the system must write the reset command to return to reading array data. the remaining scenario is that the system initially de- termines that the toggle bit is toggling and dq5 has not gone high. the system may continue to monitor the toggle bit and dq5 through successive read cy- cles, determining the status as described in the previ- ous paragraph. alternatively, it may choose to perform other system tasks. in this case, the system must start at the beginning of the algorithm when it returns to de- termine the status of the operation (top of figure 6). dq5: exceeded timing limits dq5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. under these conditions dq5 produces a 1, indicating that the program or erase cycle was not successfully completed. the device may output a 1 on dq5 if the system tries to program a 1 to a location that was previously pro- grammed to 0. only an erase operation can change a 0 back to a 1. under this condition, the device halts the operation, and when the timing limit has been exceeded, dq5 produces a 1. under both these conditions, the system must write the reset command to return to the read mode (or to the erase-suspend-read mode if the device was previ- ously in the erase-suspend-program mode). dq3: sector erase timer after writing a sector erase command sequence, the system may read dq3 to determine whether or not erasure has begun. (the sector erase timer does not apply to the chip erase command.) if additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase com- mand. when the time-out period is complete, dq3 switches from a 0 to a 1. if the time between addi- tional sector erase commands from the system can be assumed to be less than 50 s, the system need not monitor dq3. see also the sector erase command sequence section. after the sector erase command is written, the system should read the status of dq7 (data# polling) or dq6 (toggle bit i) to ensure that the device has accepted the command sequence, and then read dq3. if dq3 is 1, the embedded erase algorithm has begun; all fur- ther commands (except erase suspend) are ignored until the erase operation is complete. if dq3 is 0, the device will accept additional sector erase commands. to ensure the command has been accepted, the sys- tem software should check the status of dq3 prior to and following each subsequent sector erase com- mand. if dq3 is high on the second status check, the last command might not have been accepted. table 11 shows the status of dq3 relative to the other status bits.
am29lv640du/am29lv641du 31 advance information table 11. write operation status notes: 1. dq5 switches to 1 when an embedded program or embedded erase operation has exceeded the maximum timing limits. refer to the section on dq5 for more information. 2. dq7 and dq2 require a valid address when reading status information. refer to the appropriate subsection for further details. 3. ry/by# is only available on the fbga package. status dq7 (note 2) dq6 dq5 (note 1) dq3 dq2 (note 2) ry/by# (note 3) standard mode embedded program algorithm dq7# toggle 0 n/a no toggle 0 embedded erase algorithm 0 toggle 0 1 toggle 0 erase suspend mode erase-suspend- read erase suspended sector 1 no toggle 0 n/a toggle 1 non-erase suspended sector data data data data data 1 erase-suspend-program dq7# toggle 0 n/a n/a 0
32 am29lv640du/am29lv641du advance information absolute maximum ratings storage temperature plastic packages . . . . . . . . . . . . . . . C65 c to +150 c ambient temperature with power applied. . . . . . . . . . . . . . C65 c to +125 c voltage with respect to ground v cc (note 1) . . . . . . . . . . . . . . . . . C0.5 v to +4.0 v a9 , oe#, acc, and reset# (note 2) . . . . . . . . . . . . . . . . . . . . C0.5 v to +12.5 v all other pins (note 1) . . . . . . C0.5 v to v cc +0.5 v output short circuit current (note 3) . . . . . . 200 ma notes: 1. minimum dc voltage on input or i/o pins is C0.5 v. during voltage transitions, input or i/o pins may overshoot v ss to C2.0 v for periods of up to 20 ns. maximum dc voltage on input or i/o pins is v cc +0.5 v. see figure 7. during voltage transitions, input or i/o pins may overshoot to v cc +2.0 v for periods up to 20 ns. see figure 8. 2. minimum dc input voltage on pins a9, oe#, acc, and reset# is C0.5 v. during voltage transitions, a9, oe#, acc, and reset# may overshoot v ss to C2.0 v for periods of up to 20 ns. see figure 7. maximum dc input voltage on pin a9, oe#, acc, and reset# is +12.5 v which may overshoot to +14.0 v for periods up to 20 ns. 3. no more than one output may be shorted to ground at a time. duration of the short circuit should not be greater than one second. stresses above those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. operating ranges industrial (i) devices ambient temperature (t a ). . . . . . . . . . C40c to +85c extended (e) devices ambient temperature (t a ). . . . . . . . .C55c to +125c v cc supply voltages v cc for all devices . . . . . . . . . . . . . . . . . 2.7 v to 3.6 v operating ranges define those limits between which the functionality of the device is guaranteed. figure 7. maximum negative overshoot waveform figure 8. maximum positive overshoot waveform 20 ns 20 ns +0.8 v C0.5 v 20 ns C2.0 v 22366a-12 20 ns 20 ns v cc +2.0 v v cc +0.5 v 20 ns 2.0 v 22366a-13
am29lv640du/am29lv641du 33 advance information dc characteristics cmos compatible notes: 1. all test conditions assume v io = v cc . 2. on the wp# pin only, the maximum input load current when wp# = v il is 5.0 a. 3. the i cc current listed is typically less than 2 ma/mhz, with oe# at v ih . 4. maximum i cc specifications are tested with v cc = v cc max. 5. i cc active while embedded erase or embedded program is in progress. 6. automatic sleep mode enables the low power mode when addresses remain stable for t acc + 30 ns. typical sleep mode current is 200 na. 7. not 100% tested. parameter symbol parameter description test conditions (note 1) min typ max unit i li input load current (note 2) v in = v ss to v cc , v cc = v cc max 1.0 a i lit a9, acc input load current v cc = v cc max ; a9 = 12.5 v 35 a i lo output leakage current v out = v ss to v cc , v cc = v cc max 1.0 a i cc1 v cc active read current (notes 3, 4) ce# = v il, oe# = v ih, v io = v cc 5 mhz 9 16 ma 1 mhz 2 4 i cc2 v cc active write current (notes 4, 5) ce# = v il, oe# = v ih , we# = v il , v io = v cc 26 30 ma i cc3 v cc standby current (note 4) ce#, reset# = v cc 0.3 v 0.2 5 a i cc4 v cc reset current (note 4) reset# = v ss 0.3 v 0.2 5 a i cc5 automatic sleep mode (notes 4, 6) v ih = v cc 0.3 v; v il = v ss 0.3 v 0.2 5 a i acc acc accelerated program current ce# = v il , oe# = v ih acc pin 5 10 ma v cc pin 15 30 ma v il input low voltage C0.5 0.8 v v ih input high voltage 0.7 x v cc v cc + 0.3 v v hh voltage for acc program acceleration v cc = 3.0 v 10% 11.5 12.5 v v id voltage for autoselect and temporary sector unprotect v cc = 3.0 v 10% 8.5 12.5 v v ol output low voltage i ol = 4.0 ma, v cc = v cc min 0.45 v v oh1 output high voltage i oh = C2.0 ma, v cc = v cc min 0.85 v cc v v oh2 i oh = C100 a, v cc = v cc min v cc C0.4 v v lko low v cc lock-out voltage (note 7) 2.3 2.5 v
34 am29lv640du/am29lv641du advance information dc characteristics zero-power flash note: addresses are switching at 1 mhz 22366a-14 figure 9. i cc1 current vs. time (showing active and automatic sleep currents) 25 20 15 10 5 0 0 500 1000 1500 2000 2500 3000 3500 4000 supply current in ma time in ns 10 8 2 0 12345 frequency in mhz supply current in ma note: t = 25 c 22366a-15 figure 10. typical i cc1 vs. frequency 4 6 12 2.7 v 3.6 v
am29lv640du/am29lv641du 35 advance information test conditions table 12. test specifications key to switching waveforms 2.7 k w c l 6.2 k w 3.3 v device under te s t note: diodes are in3064 or equivalent 22366a-16 figure 11. test setup test condition 90 120, 150 unit output load 1 ttl gate output load capacitance, c l (including jig capacitance) 30 100 pf input rise and fall times 5 ns input pulse levels 0.0C3.0 v input timing measurement reference levels 1.5 v output timing measurement reference levels v io /2 v ks000010-pal waveform inputs outputs steady changing from h to l changing from l to h dont care, any change permitted changing, state unknown does not apply center line is high impedance state (high z) 3.0 v 0.0 v 1.5 v v io /2 output measurement level input 22366a-17 figure 12. input waveforms and measurement levels
36 am29lv640du/am29lv641du advance information ac characteristics read-only operations notes: 1. all test setups assume v io = v cc . 2. not 100% tested. 3. see figure 11 and table 12 for test specifications. parameter description test setup (note 1) speed options jedec std. 90 120 150 unit t avav t rc read cycle time (note 2) min 90 120 150 ns t avqv t acc address to output delay ce#, oe# = v il max 90 120 150 ns t elqv t ce chip enable to output delay oe# = v il max 90 120 150 ns t glqv t oe output enable to output delay max 35 50 65 ns t ehqz t df chip enable to output high z (note 2) max 30 30 60 ns t ghqz t df output enable to output high z (note 2) max 30 30 60 ns t axqx t oh output hold time from addresses, ce# or oe#, whichever occurs first min 0 ns t oeh output enable hold time (note 2) read min 0 ns toggle and data# polling min 10 ns t oh t ce outputs we# addresses ce# oe# high z output valid high z addresses stable t rc t acc t oeh t rh t oe t rh 0 v ry/by# reset# t df 22366a-18 figure 13. read operation timings
am29lv640du/am29lv641du 37 advance information ac characteristics hardware reset (reset#) note: not 100% tested. parameter description all speed options unit jedec std t ready reset# pin low (during embedded algorithms) to read mode (see note) max 20 m s t ready reset# pin low (not during embedded algorithms) to read mode (see note) max 500 ns t rp reset# pulse width min 500 ns t rh reset high time before read (see note) min 50 ns t rpd reset# low to standby mode min 20 m s t rb ry/by# recovery time min 0 ns reset# ry/by# ry/by# t rp t ready reset timings not during embedded algorithms t ready ce#, oe# t rh ce#, oe# reset timings during embedded algorithms reset# t rp t rb 22366a-19 figure 14. reset timings
38 am29lv640du/am29lv641du advance information ac characteristics erase and program operations notes: 1. not 100% tested. 2. see the erase and programming performance section for more information. parameter speed options jedec std. description 90 120 150 unit t avav t wc write cycle time (note 1) min 90 120 150 ns t avwl t as address setup time min 0 ns t aso address setup time to oe# low during toggle bit polling min 15 ns t wlax t ah address hold time min 45 50 70 ns t aht address hold time from ce# or oe# high during toggle bit polling min 0 ns t dvwh t ds data setup time min 45 50 70 ns t whdx t dh data hold time min 0 ns t oeph output enable high during toggle bit polling min 20 ns t ghwl t ghwl read recovery time before write (oe# high to we# low) min 0 ns t elwl t cs ce# setup time min 0 ns t wheh t ch ce# hold time min 0 ns t wlwh t wp write pulse width min 35 50 70 ns t whdl t wph write pulse width high min 30 ns t whwh1 t whwh1 word programming operation (note 2) typ 11 s t whwh1 t whwh1 accelerated word programming operation (note 2) typ 7 s t whwh2 t whwh2 sector erase operation (note 2) typ 0.7 sec t vhh v hh rise and fall time (note 1) min 250 ns t vcs v cc setup time (note 1) min 50 s t rb write recovery time from ry/by# min 0 ns t busy program/erase valid to ry/by# delay min 90 ns
am29lv640du/am29lv641du 39 advance information ac characteristics oe# we# ce# v cc data addresses t ds t ah t dh t wp pd t whwh1 t wc t as t wph t vcs 555h pa pa read status data (last two cycles) a0h t ghwl t cs status d out program command sequence (last two cycles) ry/by# t rb t busy t ch pa n otes: 1 . pa = program address, pd = program data, d out is the true data at the program address. 2 . illustration shows device in word mode. 22366a-20 figure 15. program operation timings acc t vhh v hh v il or v ih v il or v ih t vhh 22366a-21 figure 16. accelerated program timing diagram
40 am29lv640du/am29lv641du advance information ac characteristics oe# ce# addresses v cc we# data 2aah sa t ghwl t ah t wp t wc t as t wph 555h for chip erase 10 for chip erase 30h t ds t vcs t cs t dh 55h t ch in progress complete t whwh2 va va erase command sequence (last two cycles) read status data ry/by# t rb t busy notes: 1. sa = sector address (for sector erase), va = valid address for reading status data ( see write operation status. 2. these waveforms are for the word mode. 22366a-22 figure 17. chip/sector erase operation timings
am29lv640du/am29lv641du 41 advance information ac characteristics we# ce# oe# high z t oe high z dq7 dq0Cdq6 ry/by# t busy complement true addresses va t oeh t ce t ch t oh t df va va status data complement status data true valid data valid data t acc t rc note: va = valid address. illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. 22366a-23 figure 18. data# polling timings (during embedded algorithms)
42 am29lv640du/am29lv641du advance information ac characteristics oe# ce# we# addresses t oeh t dh t aht t aso t oeph t oe valid data (first read) (second read) (stops toggling) t ceph t aht t as dq6/dq2 valid data valid status valid status valid status ry/by# note: va = valid address; not required for dq6. illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle 22366a-24 figure 19. toggle bit timings (during embedded algorithms) note: dq2 toggles only when read at an address within an erase-suspended sector. the system may use oe# or ce# to toggle dq2 and dq6. 22366a-25 figure 20. dq2 vs. dq6 enter erase erase erase enter erase suspend program erase suspend read erase suspend read erase we# dq6 dq2 erase complete erase suspend suspend program resume embedded erasing
am29lv640du/am29lv641du 43 advance information ac characteristics temporary sector unprotect note: not 100% tested. parameter all speed options jedec std description unit t vidr v id rise and fall time (see note) min 500 ns t rsp reset# setup time for temporary sector unprotect min 4 s t rrb reset# hold time from ry/by# high for temporary sector group unprotect min 4 s reset# t vidr v id v ss , v il , or v ih v id v ss , v il , or v ih ce# we# ry/by# t vidr t rsp program or erase command sequence t rrb 22366a-26 figure 21. temporary sector group unprotect timing diagram
44 am29lv640du/am29lv641du advance information ac characteristics sector group protect: 150 s, sector group unprot ect: 15 ms 1 s reset# sa, a6, a1, a0 data ce# we# oe# 60h 60h 40h valid* valid* valid* status sector group protect or unprotect verify v id v ih * for sector group protect, a6 = 0, a1 = 1, a0 = 0. for sector group unprotect, a6 = 1, a1 = 1, a0 = 0. 22366a-27 figure 22. sector group protect and unprotect timing diagram
am29lv640du/am29lv641du 45 advance information ac characteristics alternate ce# controlled erase and program operations notes: 1. not 100% tested. 2. see the erase and programming performance section for more information. parameter speed options jedec std description 90 120 150 unit t avav t wc write cycle time (note 1) min 90 120 150 ns t avwl t as address setup time min 0 ns t elax t ah address hold time min 45 50 70 ns t dveh t ds data setup time min 45 50 70 ns t ehdx t dh data hold time min 0 ns t ghel t ghel read recovery time before write (oe# high to we# low) min 0 ns t wlel t ws we# setup time min 0 ns t ehwh t wh we# hold time min 0 ns t eleh t cp ce# pulse width min 45 50 70 ns t ehel t cph ce# pulse width high min 30 ns t whwh1 t whwh1 word programming operation (note 2) typ 11 s t whwh1 t whwh1 accelerated word programming operation (note 2) ty p 7 s t whwh2 t whwh2 sector erase operation (note 2) typ 0.7 sec
46 am29lv640du/am29lv641du advance information ac characteristics t ghel t ws oe# ce# we# reset# t ds data t ah addresses t dh t cp dq7# d out t wc t as t cph pa data# polling a0 for program 55 for erase t rh t whwh1 or 2 ry/by# t wh pd for program 30 for sector erase 10 for chip erase 555 for program 2aa for erase pa for program sa for sector erase 555 for chip erase t busy notes: 1. figure indicates last two bus cycles of a program or erase operation. 2. pa = program address, sa = sector address, pd = program data. 3. dq7# is the complement of the data written to the device. d out is the data written to the device. 4. waveforms are for the word mode. 22366a-28 figure 23. alternate ce# controlled write (erase/program) operation timings
am29lv640du/am29lv641du 47 advance information erase and programming performance notes: 1. typical program and erase times assume the following conditions: 25 c, 3.0 v v cc , 1,000,000 cycles. additionally, programming typicals assume checkerboard pattern. 2. under worst case conditions of 90 c, v cc = 2.7 v, 1,000,000 cycles. 3. the typical chip programming time is considerably less than the maximum chip programming time listed, since most words program faster than the maximum program times listed. 4. in the pre-programming step of the embedded erase algorithm, all bits are programmed to 00h before erasure. 5. system-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. see table 10 for further information on command definitions. 6. the device has a minimum erase and program cycle endurance of 1,000,000 cycles. latchup characteristics note: includes all pins except v cc . test conditions: v cc = 3.0 v, one pin at a time. tsop pin capacitance notes: 1. sampled, not 100% tested. 2. test conditions t a = 25c, f = 1.0 mhz. data retention parameter typ (note 1) max (note 2) unit comments sector erase time 0.7 15 sec excludes 00h programming prior to erasure (note 4) chip erase time 90 sec word program time 11 300 s excludes system level overhead (note 5) accelerated word program time 7 210 s chip program time (note 3) 48 144 sec description min max input voltage with respect to v ss on all pins except i/o pins (including a9, oe#, and reset#) C1.0 v 12.5 v input voltage with respect to v ss on all i/o pins C1.0 v v cc + 1.0 v v cc current C100 ma +100 ma parameter symbol parameter description test setup typ max unit c in input capacitance v in = 0 6 7.5 pf c out output capacitance v out = 0 8.5 12 pf c in2 control pin capacitance v in = 0 7.5 9 pf parameter description test conditions min unit minimum pattern data retention time 150 c 10 years 125 c 20 years
48 am29lv640du/am29lv641du advance information physical dimensions sso05656-pin shrink small outline package (ssop) (measured in millimeters) see detail "g" see detail "b" 0.20 m c c a ss b 0.20 m c a ss b 0.10 56 29 128 index area 13.10 13.50 15.70 16.30 16-038-sso56-2_ab es107 9.15.98 lv 23.40 24.00 seating plane 0.80 bsc 0.25 0.45 0.45 0.65 1.15 1.35 2.00 max gauge plane seating plane detail "g" 0.60 1.00 0.09 min 0 8 a a 0.25 0.40 bsc even lead sides x = d or f detail "b" with lead finish 0.10 0.21 0.10 0.18 0.30 0.40 0.25 0.45 base metal section a-a
am29lv640du/am29lv641du 49 advance information physical dimensions fbe06363-ball fine-pitch ball grid array (fbga) 11 x 12 mm (measured in millimeters) 16-038-fba-3_ad fbe063 4.19.99 lv 5.60 bsc 0.40 bsc 0.40 bsc 8.80 bsc pin 1 id. .25 .10 m zab m z 0.25 0.35 0.80 bsc 0.84 0.94 0.20 0.30 1.00 1.20 0.08 z 0.25 z z 0.20 (4x) 11.00 bsc 12.00 bsc a b a1 corner index mark
50 am29lv640du/am29lv641du advance information physical dimensions ts 04848-pin standard tsop (measured in millimeters) * for reference only. bsc is an ansi standard for basic space centering. 48 25 1 24 18.30 18.50 19.80 20.20 11.90 12.10 0.05 0.15 0.50 bsc 0.95 1.05 16-038-ts48-2 ts 048 dt95 8-8-96 lv pin 1 i.d. 1.20 max 0.50 0.70 0.10 0.21 0.25mm (0.0098") bsc 0 5 0.08 0.20
am29lv640du/am29lv641du 51 advance information physical dimensions tsr04848-pin reverse tsop (measured in millimeters) * for reference only. bsc is an ansi standard for basic space centering. 48 25 1 24 18.30 18.50 19.80 20.20 11.90 12.10 seating plane 0.05 0.15 0.50 bsc 0.95 1.05 16-038-ts48 tsr048 dt95 8-8-96 lv pin 1 i.d. 1.20 max 0.50 0.70 0.10 0.21 0.25mm (0.0098") bsc 0 5 0.08 0.20
52 am29lv640du/am29lv641du advance information revision summary revision a+1 (may 4, 1999) global deleted references to the 4-word unique esn. re- placed references to v ccq with v io . connection diagrams 63-ball fbga: corrected signal for ball h7 to v io . ordering information added u designator description. secsi (secured silicon) sector flash memory region in the third paragraph, replaced references to boot sectors with sa0. added table to show secsi sector contents. dc characteristics table added v io = v cc as a test condition for i cc1 and i cc2 . changed v hh minimum specification from 8.5 v to 11.5 v. revision a+2 (may 14, 1999) ordering information clarified the differences between the h, l, and u designators. revision a+3 (june 7, 1999) product selector guide added note under table. ordering information deleted the 0 from the 120 and 150 ns part numbers. corrected the fbga package marking for the 150 ns speed option. revision a+4 (june 25, 1999) global information on the 56-pin ssop package has been added: pinout information and physical dimension drawings. command definitions corrected the data for secsi sector protection in note 9. added device id data to the table. revision a+5 (august 2, 1999) block diagram separated wp# and acc. ordering information added the valid combinations for the ssop package. revision a+6 (september 28, 1999) connection diagrams clarified which packages are available for a particular part number. device bus operations versatilei/o (v ccq ) control: added comment to con- tact amd for more information on this feature. dc characteristics cmos compatible table: added notes (1 and 2) for i li and test conditions column. test conditions in test specifications table and input waveforms and meaurement levels figure, changed the output mea- surement level to v io /2. ac characteristics read-only operations table: added note for test setup column. trademarks copyright ? 1999 advanced micro devices, inc. all rights reserved. amd, the amd logo, and combinations thereof are registered trademarks of advanced micro devices, inc. expressflash is a trademark of advanced micro devices, inc. product names used in this publication are for identification purposes only and may be trademarks of their respective companies .

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